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TCD1703C 2001-10-15 1 toshiba ccd linear image sensor ccd(charge coupled device) TCD1703C the TCD1703C is a high sensitive and low dark current 7500 elements ccd image sensor. the sensor is designed for facsimile, imagescanner and ocr. the device contains a row of 7500 elements photodiodes which provide a 24 lines / mm (600dpi) across a a3 size paper. the device is operated by 5v (pulse), and 12v power supply. features number of image sensing elements : 7500 elements image sensing element size : 7m by 7m on 7m centers photo sensing region : high sensitive and low voltage dark signal pn photodiode clock : 2 phase (5v) package : 22pin dip maximum ratings (note 1) characteristic symbol rating unit clock pulse voltage v shift pulse voltage v sh reset pulse voltage v rs clamp pulse voltage v cp ? 0.3~8 power supply voltage v od ? 0.3~15 v operating temperature t opr ? 25~60 c storage temperature t stg ? 40~100 c note 1: all voltage are with respect to ss terminals (ground). weight : 6.6g ( typ. ) (top view) pin connection
TCD1703C 2001-10-15 2 circuit diagram pin names 1e, o clock (phase 1) 2e, o clock (phase 2) 2b final stage clock (phase 2) sh shift gate rs reset gate cp clamp gate os1 signal output 1 os2 signal output 2 od power ss ground nc non connection
TCD1703C 2001-10-15 3 optical / electrical characteristics (ta=25c, v od =12v, v =v sh =v rs =v cp =5v (pulse), f =1mhz, t int (integration time)=10ms, light source=daylight fluorescent lamp, load resistance=100k ? ) characteristic symbol min. typ. max. unit note sensitivity r 12 15 18 v / lxs prnu D 3 10 % (note 2) photo response non uniformity prnu (3) D 6 12 mv (note 8) saturation output voltage v sat 1.5 2.0 D v (note 3) saturation exposure se 0.08 0.13 D lxs (note 4) dark signal voltage v drk D 1.2 3 mv (note 5) dark signal non uniformity dsnu D 2.5 4 mv (note 5) dc power dissipation p d D 350 400 mw total transfer efficiency tte 92 98 D % output impedance z o D 0.2 1 k ? dynamic range dr D 1660 D D (note 6) v os1 4.0 5.5 7.0 dc signal output voltage v os2 4.0 5.5 7.0 v (note 7) dc differential error voltage |v os1 ? v os2 | D D 300 mv random noise nd D 1.0 D mv (note 9) note 2: measured at 50% of se (typ.) definition of prnu : prnu= % 100 where is average of total signal outputs and is maximum deviation from under uniform illumination. (channel 1) in the case of 3750 elements (channel 2), the condition is the same as above too. note 3: v sat is defined as minimum saturation output voltage of all effective pixels. note 4: definition of se : se= r sat v (lxs)
TCD1703C 2001-10-15 4 note 5: v drk is defined as average dark signal voltage of all effective pixels. dsnu is defined as different voltage between v drk and v mdk when v mdk is maximum dark signal voltage. note 6: definition of dr : dr= drk v sat v v drk is proportional to t int (integration time). so the shorter t int condition makes wider dr values. note 7: dc signal output voltage and dc compensation output voltage are defined as follows: note 8: prnu (3) is defined as maximum voltage with next pixel, where measured 5% of se (typ.)
TCD1703C 2001-10-15 5 note 9: random noise is defined as the standard deviation (sigma) of the output level difference between two adjacent effective pixels under no illumination (i.e. dark condition) calculated by the following procedure. 1) two adjacent pixels (pixel n and n+1) in one reading are fixed as measurement points. 2) each of the output levels at video output periods averaged over 200 nanosecond period to get vn and vn+1. 3) vn+1 is subtracted from vn to get ? v ? v=vn ? vn+1 4) the standard deviation of ? v is calculated after procedure 2) and 3) are repeated 30 times (30 readings). 30 1 i 2 v vi 30 1 30 1 i vi 30 1 v 5) procedure 2), 3) and 4) are repeated 10 times to get 10 sigma values. 10 1 j j 10 1 6) value calculated using the above procedure is observed 2 times larger than that measured relative to the ground level. so we specify the random noise as follows. random noise= 2 1
TCD1703C 2001-10-15 6 operating condition characteristic symbol min. typ. max. unit ?h? level 4.5 5 5.5 clock pulse voltage ?l? level v 1e, o v 2e, o 0 D 0.5 v ?h? level 4.5 5 5.5 final stage clock voltage ?l? level v 2b 0 D 0.5 v ?h? level 4.5 5 5.5 shift pulse voltage ?l? level v sh 0 D 0.5 v ?h? level 4.5 5 5.5 reset pulse voltage ?l? level v rs 0 D 0.5 v ?h? level 4.5 5 5.5 clamp pulse voltage ?l? level v cp 0 D 0.5 v power supply voltage v od 11.4 12.0 13.0 v clock characteristics (ta=25c) characteristic symbol min. typ. max. unit clock pulse frequency f D 1 20 mhz reset pulse frequency f rs D 1 20 mhz c e D 300 D clock capacitance (note 10) c o D 300 D pf final stage clock capacitance c b D 10 20 pf shift gate capacitance c sh D 60 D pf reset gate capacitance c rs D 10 20 pf clamp gate capacitance c cp D 10 20 pf note 10: v od =12v
TCD1703C 2001-10-15 7 timing chart TCD1703C ? 7
TCD1703C 2001-10-15 8 timing requirements note 11: each rs and cp pins put to low level during this period.
TCD1703C 2001-10-15 9 characteristic symbol min. typ. (note 12 ) max. unit pulse timing of sh and 1e, 1o t1, t5 200 500 D ns sh pulse rise time, fall time t2, t4 0 50 D ns sh pulse width t3 1000 1500 D ns 2b pulse rise time, fall time t6, t7 0 100 D ns rs pulse rise time, fall time t8, t10 0 20 D ns rs pulse width t9 10 100 D ns video data delay time (note 13) t11 D 10 D ns cp pulse rise time, fall time t12, t14 0 20 D ns cp pulse width t13 10 100 D ns pulse timing of 2b and cp t15 0 50 D ns t16 0 100 D pulse timing of rs and cp t17 10 100 D ns pulse timing of sh and cp t18 200 D D ns pulse timing of sh and rs t19 200 D D ns note 12: typ. is the case of frs=1.0mhz note 13: load resistance is 100k ?
TCD1703C 2001-10-15 10 caution 1. window glass the dust and stain on the glass window of the package degrade optical performance of ccd sensor. keep the glass window clean by saturating a cotton swab in alcohol and lightly wiping the surface, and allow the glass to dry, by blowing with filtered dry n2. care should be taken to avoid mechanical or thermal shock because the glass window is easily to damage. 2. electrostatic breakdown store in shorting clip or in conductive foam to avoid electrostatic breakdown. ccd image sensor is protected against static electricity, but interior puncture mode device due to static electricity is sometimes detected. in handing the device, it is necessary to execute the following static electricity preventive measures, in order to prevent the trouble rate increase of the manufacturing system due to static electricity. a. prevent the generation of static electricity due to friction by making the work with bare hands or by putting on cotton gloves and non-charging working clothes. b. discharge the static electricity by providing earth plate or earth wire on the floor, door or stand of the work room. c. ground the tools such as soldering iron, radio cutting pliers of or pincer. it is not necessarily required to execute all precaution items for static electricity. it is all right to mitigate the precautions by confirming that the trouble rate within the prescribed range. 3. incident light ccd sensor is sensitive to infrared light. note that infrared light component degrades resolution and prnu of ccd sensor. 4. soldering soldering by the solder flow method cannot be guaranteed because this method may have deleterious effects on prevention of window glass soiling and heat resistance. using a soldering iron, complete soldering within ten seconds for lead temperatures of up to 260c, or within three seconds for lead temperatures of up to 350c.
TCD1703C 2001-10-15 11 package dimensions note 1: no. 1 sensor element (s1) to edge of package. note 2: top of chip to bottom of package. note 3: glass thicknes (n=1.5) note 4: no. 1 sensor element (s1) to center of no. 1 pin. weight : 6.6g (t yp .) unit : mm
TCD1703C 2001-10-15 12 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707eb a restrictions on product use

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